parameter symbol value unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5 v collector current i c 4.0 a base current i b 0.1 a total dissipation at p tot 40 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c BD681/bd682 description parameter symbol test conditions min. typ. max. unit collector cut-off current i ceo v ce =100v, i b =0 0.2 ma collector cut-off current i cbo v cb =100v, i e =0 0.5 ma emitter cut-off current i ebo v eb =5v, i c =0 2.0 ma collector-emitter sustaining voltage v ceo i c =50ma, i b =0 100 v dc current gain h fe(1) v ce =3v, i c =1.5a 750 collector-emitter saturation voltage v ce(sat) i c =1.5a,i b =30ma 2.5 v base-emitter voltage v be v ce =3v,i c =1.5a 2.5 v complementary silicon power darlington transistors product specification the BD681, are silicon epitaxial-base npn power transistors in monolithic darlington configuration mounted in jedec to-126 plastic package. they are intended for use in medium power linar and switching applications the complementary pnp types are bd682, respectively. electrical characteristics absolute maximum ratings( ta = 25 c) o ( ta = 25 c) o r r1=7.0k r2=0.23k tiger electronic co.,ltd
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